
N-Channel Power MOSFET featuring SyncFET™ technology. 25V drain-source breakdown voltage (Vdss) and 30A continuous drain current (ID). Low on-resistance of 1.2mR at a nominal Vgs of 1.7V. Surface mount package with 1.45mR Rds On max. Operating temperature range from -55°C to 150°C.
Onsemi FDMS7560S technical specifications.
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 5.945nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.09g |
| Width | 6.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS7560S to view detailed technical specifications.
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