
N-Channel PowerTrench® MOSFET featuring 30V drain-to-source breakdown voltage and 2.5mΩ drain-to-source resistance. This single element transistor offers a continuous drain current of 26A and a maximum power dissipation of 65W. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and is supplied in tape and reel packaging with 3000 units per reel. Key switching characteristics include a 4ns fall time, 12ns turn-on delay, and 32ns turn-off delay.
Onsemi FDMS8020 technical specifications.
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 3.8nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 65W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.0681g |
| Width | 6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS8020 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
