N-Channel PowerTrench® MOSFET featuring 30V drain-to-source breakdown voltage and 2.5mΩ drain-to-source resistance. This single element transistor offers a continuous drain current of 26A and a maximum power dissipation of 65W. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and is supplied in tape and reel packaging with 3000 units per reel. Key switching characteristics include a 4ns fall time, 12ns turn-on delay, and 32ns turn-off delay.
MountingSurface Mount
PolarityN-CHANNEL
Power65W
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Technical Specifications
Onsemi FDMS8020 technical specifications.
General
Continuous Drain Current (ID)
26A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.5mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
4ns
Gate to Source Voltage (Vgs)
20V
Height
1.05mm
Input Capacitance
3.8nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
65W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
65W
Radiation Hardening
No
Rds On Max
2.5mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
32ns
Turn-On Delay Time
12ns
Weight
0.0681g
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMS8020 Datasheet
Download the complete datasheet for Onsemi FDMS8020 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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