Dual N-Channel Power MOSFET featuring 100V drain-to-source breakdown voltage and 10A continuous drain current. Offers a low 13mΩ Rds On resistance and 59W power dissipation. Surface mountable with a 5mm length, 6mm width, and 0.75mm height, this RoHS compliant component is ideal for high-performance applications. Includes fast switching characteristics with a 4ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power59W
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Technical Specifications
Onsemi FDMS8090 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Dual |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 59W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 17.4ns |
| Turn-On Delay Time | 10.6ns |
| Weight | 0.25g |
| Width | 6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMS8090 Datasheet
Download the complete datasheet for Onsemi FDMS8090 to view detailed technical specifications.
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