N-Channel MOSFET featuring PowerTrench® and SyncFET™ technology. Offers a 25V drain-source breakdown voltage and a continuous drain current of 35A. Low on-resistance of 1.8mΩ at a 10V gate-source voltage. Surface mountable in a 5.85mm x 5.1mm package with a height of 1.05mm, supplied on a 3000-piece tape and reel. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W.
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS8560S technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.8mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.05mm |
| Input Capacitance | 4.35nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.09g |
| Width | 5.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMS8560S Datasheet
Download the complete datasheet for Onsemi FDMS8560S to view detailed technical specifications.
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