
N-Channel MOSFET featuring 150V drain-source breakdown voltage and 28A continuous drain current. Offers low 17mΩ Rds On resistance and 125W maximum power dissipation. Surface mountable with a compact 5.85mm x 5.1mm x 1mm package. Includes fast switching characteristics with a 16ns turn-on delay and 5ns fall time. RoHS compliant and lead-free.
Onsemi FDMS86200DC technical specifications.
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 2.955nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | Dual Cool™, PowerTrench® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.09g |
| Width | 5.85mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS86200DC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
