P-Channel MOSFET featuring -150V drain-source voltage and 22A continuous drain current. Offers low 53mΩ maximum drain-source on-resistance and 104W maximum power dissipation. Designed for surface mounting with a compact 5mm x 5.85mm x 1.05mm package. Includes fast switching characteristics with 17ns turn-on delay and 14ns fall time.
MountingSurface Mount
PolarityP-CHANNEL
Power104W
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Technical Specifications
Onsemi FDMS86263P technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Drain to Source Resistance | 43mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.05mm |
| Input Capacitance | 3.905nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 104W |
| Rds On Max | 53mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -2.9V |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.0681g |
| Width | 5.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMS86263P Datasheet
Download the complete datasheet for Onsemi FDMS86263P to view detailed technical specifications.
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