N-Channel MOSFET, Dual CoolTM 56 Power Trench® technology, 60V Drain to Source Breakdown Voltage, 2.3mΩ Drain to Source Resistance (Rds On Max). Features 29A Continuous Drain Current (ID), 125W Power Dissipation, and a maximum operating temperature of 150°C. This surface mount component offers fast switching with turn-on delay of 35ns and fall time of 8.2ns. Packaged in tape and reel, it is lead-free and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Onsemi FDMS86500DC technical specifications.
General
Continuous Drain Current (ID)
29A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
2.3mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
8.2ns
Gate to Source Voltage (Vgs)
20V
Height
1.05mm
Input Capacitance
7.68nF
Lead Free
Lead Free
Length
5.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
2.3mR
RoHS Compliant
Yes
Series
Dual Cool™, PowerTrench®
Turn-Off Delay Time
34ns
Turn-On Delay Time
35ns
Weight
0.09g
Width
5.85mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMS86500DC Datasheet
Download the complete datasheet for Onsemi FDMS86500DC to view detailed technical specifications.
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