
N-Channel MOSFET, Dual CoolTM 56 Power Trench® technology, 60V Drain to Source Breakdown Voltage, 2.3mΩ Drain to Source Resistance (Rds On Max). Features 29A Continuous Drain Current (ID), 125W Power Dissipation, and a maximum operating temperature of 150°C. This surface mount component offers fast switching with turn-on delay of 35ns and fall time of 8.2ns. Packaged in tape and reel, it is lead-free and RoHS compliant.
Onsemi FDMS86500DC technical specifications.
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 8.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 7.68nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 2.3mR |
| RoHS Compliant | Yes |
| Series | Dual Cool™, PowerTrench® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.09g |
| Width | 5.85mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS86500DC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
