
N-Channel MOSFET, 60V Drain to Source Breakdown Voltage, 42A Continuous Drain Current, and 7.4mΩ Rds On. Features include a 6.25mm x 5.1mm x 1.05mm surface mount package, 69W maximum power dissipation, and a 20V Gate to Source Voltage rating. This single-channel device offers fast switching with a 4ns fall time and operates within a -55°C to 150°C temperature range. Packaged on a 3000-piece tape and reel, this RoHS compliant component is ideal for power management applications.
Onsemi FDMS86520 technical specifications.
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 2.85nF |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
| Radiation Hardening | No |
| Rds On Max | 7.4mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.0681g |
| Width | 6.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS86520 to view detailed technical specifications.
No datasheet is available for this part.