FDN304PZ

P-CH MOSFET 20V 2.4A 52mR SOT-23

P-Channel MOSFET, 20V Drain-Source Voltage, 2.4A Continuous Drain Current. Features 52mΩ Max Drain-Source On Resistance and 8V Gate-Source Voltage. Operates within -55°C to 150°C temperature range with 500mW power dissipation. Surface mountable in a 3-pin SOT-23 package, supplied on tape and reel.

PackageTO-236-3

Current Rating-2.4A

MountingSurface Mount

PolarityP-CHANNEL

Quick Jump:

Technical Specifications

Onsemi FDN304PZ technical specifications.

General

Package/Case	TO-236-3
Continuous Drain Current (ID)	2.4A
Current Rating	-2.4A
Drain to Source Breakdown Voltage	-20V
Drain to Source Resistance	52mR
Drain to Source Voltage (Vdss)	20V
Drain-source On Resistance-Max	52MR
Dual Supply Voltage	-20V
Element Configuration	Single
Fall Time	15ns
FET Technology	METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs)	8V
Height	0.94mm
Input Capacitance	1.31nF
JESD-30 Code	R-PDSO-G3
Lead Free	Lead Free
Length	2.92mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Nominal Vgs	-800mV
Number of Elements	1
Package Body Material	Plastic
Package Quantity	3000
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	260°C
Polarity	P-CHANNEL
Power Dissipation	500mW
Radiation Hardening	No
Rds On Max	52mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerTrench®
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Gull Wing
Terminal Position	DUAL
Termination	SMD/SMT
Threshold Voltage	-800mV
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-Off Delay Time	40ns
Turn-On Delay Time	15ns
DC Rated Voltage	-20V
Weight	0.03g
Width	1.4mm