P-Channel MOSFET, 20V Drain-Source Voltage, 2.4A Continuous Drain Current. Features 52mΩ Max Drain-Source On Resistance and 8V Gate-Source Voltage. Operates within -55°C to 150°C temperature range with 500mW power dissipation. Surface mountable in a 3-pin SOT-23 package, supplied on tape and reel.
PackageTO-236-3
Current Rating-2.4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDN304PZ technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.4A
Current Rating
-2.4A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
52mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
52MR
Dual Supply Voltage
-20V
Element Configuration
Single
Fall Time
15ns
FET Technology
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs)
8V
Height
0.94mm
Input Capacitance
1.31nF
JESD-30 Code
R-PDSO-G3
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Nominal Vgs
-800mV
Number of Elements
1
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
P-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
52mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Termination
SMD/SMT
Threshold Voltage
-800mV
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
DC Rated Voltage
-20V
Weight
0.03g
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN304PZ Datasheet
Download the complete datasheet for Onsemi FDN304PZ to view detailed technical specifications.
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