Single P-channel logic level MOSFET, designed for surface mount applications. Features a -20V drain-source breakdown voltage and a continuous drain current of 1.3A. Offers a low drain-source on-resistance of 200mΩ at a nominal gate-source voltage of -900mV. This component boasts fast switching speeds with a turn-on delay time of 7ns and a fall time of 12ns. Packaged in a TO-236-3 (SOT-23) surface mount package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-236-3
Current Rating-1.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDN336P technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 1.3A |
| Current Rating | -1.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 200mR |
| Dual Supply Voltage | -20V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.94mm |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Nominal Vgs | -900mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -900mV |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -20V |
| Weight | 0.03g |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDN336P Datasheet
Download the complete datasheet for Onsemi FDN336P to view detailed technical specifications.
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