ONSEMI

FDN359AN

Datasheet

N-Ch MOSFET, 30V, 2.7A, 46mΩ, SOT-23, Logic Level

Onsemi

FDN359AN

Name: FDN359AN Onsemi
Brand: Onsemi
SKU: FDN359AN

N-Ch MOSFET, 30V, 2.7A, 46mΩ, SOT-23, Logic Level

N-Channel Logic Level MOSFET, 30V Vds, 2.7A Continuous Drain Current. Features 46mΩ maximum drain-source on-resistance at nominal 1.6V gate-source voltage. Surface mount SOT-23 package with 500mW power dissipation. Operates from -55°C to 150°C, with fast switching speeds including 6ns turn-on delay. RoHS compliant and lead-free.

PackageSOT-23

Current Rating2.7A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FDN359AN technical specifications.

General

Package/Case	SOT-23
Continuous Drain Current (ID)	2.7A
Current Rating	2.7A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	37mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	46mR
Dual Supply Voltage	30V
Element Configuration	Single
Fall Time	13ns
Gate to Source Voltage (Vgs)	20V
Height	0.94mm
Input Capacitance	480pF
Lead Free	Lead Free
Length	2.92mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500mW
Mount	Surface Mount
Nominal Vgs	1.6V
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	500mW
Radiation Hardening	No
Rds On Max	46mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerTrench®
Termination	SMD/SMT
Threshold Voltage	1.6V
Turn-Off Delay Time	15ns
Turn-On Delay Time	6ns
DC Rated Voltage	30V
Weight	0.03g
Width	3.05mm