N-Channel Silicon Metal-oxide Semiconductor FET, a single-element junction field-effect transistor designed for surface mounting. Features a continuous drain current of 2.5A, a drain-to-source breakdown voltage of 20V, and a low drain-to-source resistance of 22mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in a TO-236-3 package on tape and reel.
PackageTO-236-3
Current Rating2.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDN371N technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.5A
Current Rating
2.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
20V
Fall Time
9ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
815pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
50mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
17ns
Turn-On Delay Time
7ns
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN371N Datasheet
Download the complete datasheet for Onsemi FDN371N to view detailed technical specifications.
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