N-Channel Silicon Metal-oxide Semiconductor FET, a single-element junction field-effect transistor designed for surface mounting. Features a continuous drain current of 2.5A, a drain-to-source breakdown voltage of 20V, and a low drain-to-source resistance of 22mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in a TO-236-3 package on tape and reel.
PackageTO-236-3
Current Rating2.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDN371N technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 815pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDN371N Datasheet
Download the complete datasheet for Onsemi FDN371N to view detailed technical specifications.
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