N-Channel MOSFET featuring 100V drain-source voltage and 120A continuous drain current. This single element transistor boasts a low 5.5mΩ Rds On, 39ns fall time, and 44ns turn-on delay. Operating within a -55°C to 175°C temperature range, it offers 263W maximum power dissipation and is housed in a TO-220 package for through-hole mounting. RoHS compliant and designed with PowerTrench® technology.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Onsemi FDP054N10 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.38mm |
| Input Capacitance | 13.28nF |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 263W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 3.5V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 44ns |
| Weight | 2.421g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP054N10 Datasheet
Download the complete datasheet for Onsemi FDP054N10 to view detailed technical specifications.
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