N-Channel PowerTrench® MOSFET featuring 100V drain-source breakdown voltage and 75A continuous drain current. Offers a low 10mΩ drain-source on-resistance. Operates with a maximum power dissipation of 208W and a maximum operating temperature of 175°C. Packaged in a TO-220AB through-hole mount, this single-element transistor is RoHS compliant.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power208W
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Technical Specifications
Onsemi FDP100N10 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10MR |
| Element Configuration | Single |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 7.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 70ns |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP100N10 Datasheet
Download the complete datasheet for Onsemi FDP100N10 to view detailed technical specifications.
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