N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 11.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 650mΩ. Operating across a wide temperature range of -55°C to 150°C, it supports 165W maximum power dissipation. The TO-220AB package houses a single element with fast switching characteristics, including a 24ns turn-on delay and 30ns fall time.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power165W
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Technical Specifications
Onsemi FDP12N50 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 650MR |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.315nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 165W |
| Radiation Hardening | No |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 24ns |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP12N50 Datasheet
Download the complete datasheet for Onsemi FDP12N50 to view detailed technical specifications.
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