ONSEMI

FDP12N50NZ

N-Channel MOSFET, 500V, 11.5A, 520mΩ, TO-220

Onsemi

FDP12N50NZ

Name: FDP12N50NZ Onsemi
Brand: Onsemi
SKU: FDP12N50NZ

N-Channel MOSFET, 500V, 11.5A, 520mΩ, TO-220

N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 11.5A continuous drain current. This single-element transistor offers a low 520mΩ maximum drain-to-source resistance. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 170W. Key switching characteristics include a 20ns turn-on delay and a 45ns fall time.

PackageTO-220

MountingThrough Hole

PolarityN-CHANNEL

Power170W

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Technical Specifications

Onsemi FDP12N50NZ technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	11.5A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	460mR
Drain to Source Voltage (Vdss)	500V
Element Configuration	Single
Fall Time	45ns
Gate to Source Voltage (Vgs)	25V
Height	16.07mm
Input Capacitance	1.235nF
Length	10.36mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	170W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	170W
Radiation Hardening	No
Rds On Max	520mR
RoHS Compliant	Yes
Turn-Off Delay Time	60ns
Turn-On Delay Time	20ns
Weight	1.8g
Width	4.9mm