N-channel MOSFET featuring 60V drain-source breakdown voltage and a continuous drain current of 62A. This component offers a low 13.5mΩ Rds On resistance and a maximum power dissipation of 115W. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 9ns turn-on delay and a 26ns fall time.
PackageTO-220AB
Current Rating62A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDP13AN06A0 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
62A
Current Rating
62A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
13.5mR
Drain to Source Voltage (Vdss)
60V
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
1.35nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
115W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
400
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
115W
Rds On Max
13.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
4V
Turn-Off Delay Time
44ns
Turn-On Delay Time
9ns
DC Rated Voltage
60V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDP13AN06A0 Datasheet
Download the complete datasheet for Onsemi FDP13AN06A0 to view detailed technical specifications.
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