
N-Channel MOSFET with 60V Drain-Source Voltage (Vdss) and 67A Continuous Drain Current (ID). Features low 10.2mR Drain-Source Resistance (Rds On Max 11.6mR) and 125W Max Power Dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB through-hole mount, this RoHS compliant component offers fast switching with a 24ns turn-off delay and 50ns fall time.
Onsemi FDP14AN06LA0 technical specifications.
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