N-Channel Power MOSFET, UniFET™ series, featuring 500V drain-source breakdown voltage and 18A continuous drain current. Offers a low 265mΩ drain-source on-resistance and 235W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, with typical turn-on delay of 55ns and fall time of 90ns. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220AB
Voltage500V
Current18A
Current Rating18A
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Technical Specifications
Onsemi FDP18N50 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
18A
Current
18A
Current Rating
18A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
265mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
265MR
Fall Time
90ns
Gate to Source Voltage (Vgs)
30V
Height
9.4mm
Input Capacitance
2.86nF
Lead Free
Lead Free
Length
10.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
235W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
38.5W
Rds On Max
265mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UniFET™
Threshold Voltage
5V
Turn-Off Delay Time
95ns
Turn-On Delay Time
55ns
Voltage
500V
DC Rated Voltage
500V
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDP18N50 Datasheet
Download the complete datasheet for Onsemi FDP18N50 to view detailed technical specifications.
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