N-Channel Power MOSFET, UniFET™ series, featuring a 400V drain-source breakdown voltage and a continuous drain current of 19A. This single-element transistor offers a low drain-source on-resistance of 240mΩ at a 10V gate-source voltage. Packaged in a TO-220AB through-hole mount, it supports a maximum power dissipation of 215W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 31ns turn-on delay and a 49ns fall time, with an input capacitance of 2.115nF. This RoHS compliant component is supplied in a 1000-piece tube.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power215W
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Technical Specifications
Onsemi FDP19N40 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 240MR |
| Element Configuration | Single |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.115nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 215W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 215W |
| Rds On Max | 240mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 31ns |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP19N40 Datasheet
Download the complete datasheet for Onsemi FDP19N40 to view detailed technical specifications.
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