N-Channel Power MOSFET featuring 400V drain-source breakdown voltage and 26A continuous drain current. This UniFET™ series component offers a low 160mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, it supports a maximum power dissipation of 265W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 45ns turn-on delay and 66ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power265W
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Technical Specifications
Onsemi FDP26N40 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 160MR |
| Element Configuration | Single |
| Fall Time | 66ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.38mm |
| Input Capacitance | 3.185nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 265W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 265W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 45ns |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP26N40 Datasheet
Download the complete datasheet for Onsemi FDP26N40 to view detailed technical specifications.
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