N-Channel Power MOSFET featuring UniFET™ technology. This through-hole component offers a 250V drain-source breakdown voltage and a continuous drain current of 33A. Experience low on-resistance with a maximum of 94mΩ at a 10V gate-source voltage. Designed for efficient switching, it boasts turn-on delay of 35ns and fall time of 120ns. Encased in a TO-220 package, it supports a maximum power dissipation of 235W and operates within a temperature range of -55°C to 150°C.
PackageTO-220
Current Rating33A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDP33N25 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 94mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 94MR |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 2.135nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 235W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 235W |
| Rds On Max | 94mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 250V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP33N25 Datasheet
Download the complete datasheet for Onsemi FDP33N25 to view detailed technical specifications.
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