N-Channel Power MOSFET, UniFET™ series, featuring a 200V drain-to-source breakdown voltage and 39A continuous drain current. This single-element transistor offers a low 66mΩ drain-to-source resistance at a 10V gate-source voltage. Packaged in a TO-220 through-hole mount, it supports a maximum power dissipation of 251W and operates within a temperature range of -55°C to 150°C. RoHS compliant with a 150ns turn-off delay and 30ns turn-on delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power251W
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Technical Specifications
Onsemi FDP39N20 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 39A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 66mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 150ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.13nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 251W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 251W |
| Radiation Hardening | No |
| Rds On Max | 66mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 30ns |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP39N20 Datasheet
Download the complete datasheet for Onsemi FDP39N20 to view detailed technical specifications.
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