N-Channel Power MOSFET featuring 150V drain-source breakdown voltage and 35A continuous drain current. Offers low on-resistance of 42mΩ at 10Vgs, 10Vds. Designed with a TO-220AB through-hole package, this single-element MOSFET boasts a maximum power dissipation of 150W and operates across a wide temperature range of -55°C to 175°C. Key switching parameters include a 23ns fall time and 11ns turn-on delay time.
PackageTO-220AB
Current Rating35A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDP42AN15A0 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 2.055nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FRFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 150V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP42AN15A0 Datasheet
Download the complete datasheet for Onsemi FDP42AN15A0 to view detailed technical specifications.
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