N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and a continuous drain current of 52A. This single-element transistor offers a low drain-source on-resistance of 49mΩ at a 10V gate-source voltage. Packaged in a TO-220AB through-hole mount, it supports a maximum power dissipation of 357W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 53ns and a fall time of 29ns.
PackageTO-220AB
Current Rating52A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDP52N20 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 52A |
| Current Rating | 52A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 49MR |
| Element Configuration | Single |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 357W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 357W |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 53ns |
| DC Rated Voltage | 200V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP52N20 Datasheet
Download the complete datasheet for Onsemi FDP52N20 to view detailed technical specifications.
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