N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 4.5A continuous drain current. This UniFET-II™ series component offers a low 1.5Ω (max) drain-source on-resistance and 78W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C and boasts fast switching times with a 12ns turn-on delay and 21ns fall time. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power78W
Quick Jump:
Technical Specifications
Onsemi FDP5N50NZ technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.38R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.3mm |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 78W |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 12ns |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP5N50NZ Datasheet
Download the complete datasheet for Onsemi FDP5N50NZ to view detailed technical specifications.
No datasheet is available for this part.
Product Images
