N-Channel Logic Level MOSFET featuring 30V drain-source breakdown voltage and 40A continuous drain current. This single-element transistor offers a low 18mΩ drain-to-source resistance at VGS = 10V, 10A. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 60W and operates across a temperature range of -55°C to 175°C. Key switching characteristics include an 8ns fall time and 9ns turn-on delay time.
PackageTO-220AB
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDP6030BL technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
9.4mm
Input Capacitance
1.16nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
18mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
23ns
Turn-On Delay Time
9ns
DC Rated Voltage
30V
Weight
1.8g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDP6030BL Datasheet
Download the complete datasheet for Onsemi FDP6030BL to view detailed technical specifications.
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