
N-Channel Logic Level MOSFET featuring 30V drain-source breakdown voltage and 40A continuous drain current. This single-element transistor offers a low 18mΩ drain-to-source resistance at VGS = 10V, 10A. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 60W and operates across a temperature range of -55°C to 175°C. Key switching characteristics include an 8ns fall time and 9ns turn-on delay time.
Onsemi FDP6030BL technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 30V |
| Weight | 1.8g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDP6030BL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
