The FDP603AL is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 33A. It features a drain to source resistance of 22mR and a power dissipation of 50W. The device is packaged in a TO-220 case and operates over a temperature range of -65°C to 175°C. It is not RoHS compliant.
Onsemi FDP603AL technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 22mR |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FDP603AL to view detailed technical specifications.
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