N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and a continuous drain current of 61A. This UniFET™ series component offers a low drain-source on-resistance of 41mΩ at a 10V gate-source voltage. Packaged in a TO-220 through-hole mount, it supports a maximum power dissipation of 417W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 40ns turn-on delay and a 170ns fall time. RoHS compliant and lead-free.
PackageTO-220
Voltage200V
Current61A
Current Rating61A
Quick Jump:
Technical Specifications
Onsemi FDP61N20 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 61A |
| Current | 61A |
| Current Rating | 61A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 41MR |
| Fall Time | 170ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 3.38nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 417W |
| Radiation Hardening | No |
| Rds On Max | 41mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 40ns |
| Voltage | 200V |
| DC Rated Voltage | 200V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP61N20 Datasheet
Download the complete datasheet for Onsemi FDP61N20 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
