N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current of 65A. This single-element transistor offers a low on-resistance of 16mΩ at a nominal gate-source voltage of 2V. Packaged in a TO-220 through-hole mount, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 135W. Key switching characteristics include a turn-on delay time of 24ns and a fall time of 52ns.
PackageTO-220
Current Rating65A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDP65N06 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 65A |
| Current Rating | 65A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 2.17nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 135W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 98ns |
| Turn-On Delay Time | 24ns |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP65N06 Datasheet
Download the complete datasheet for Onsemi FDP65N06 to view detailed technical specifications.
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