N-Channel Power MOSFET, UniFET™ series, featuring a 500V drain-to-source breakdown voltage and a continuous drain current of 7A. This through-hole component offers a low Rds(on) of 760mΩ at a 10V gate-source voltage. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 89W. The TO-220-3 package contains 50 units per rail/tube, with typical turn-on delay of 6ns and fall time of 35ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power89W
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Technical Specifications
Onsemi FDP7N50 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 760mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.51mm |
| Input Capacitance | 940pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6ns |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP7N50 Datasheet
Download the complete datasheet for Onsemi FDP7N50 to view detailed technical specifications.
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