
N-Channel Logic Level PowerTrench® MOSFET featuring 40V drain-source breakdown voltage and a maximum continuous drain current of 277A. This single-element transistor offers a low 2.2mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C with a maximum power dissipation of 306W. Key switching characteristics include a 43ns turn-on delay and 290ns fall time.
Onsemi FDP8440 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 277A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 2.2MR |
| Element Configuration | Single |
| Fall Time | 290ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 24.74nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 306W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 306W |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 435ns |
| Turn-On Delay Time | 43ns |
| Weight | 1.8g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDP8440 to view detailed technical specifications.
No datasheet is available for this part.
