
Dual N-Channel Power MOSFET featuring 30V drain-to-source breakdown voltage and 55A continuous drain current. Offers low 6.4mR Rds(on) at 1.7V nominal gate-source voltage. Surface mountable with a compact 3.4mm x 3.4mm footprint and 2W power dissipation. Includes fast switching characteristics with 4ns fall time and 6ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C.
Onsemi FDPC8013S technical specifications.
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 827pF |
| Lead Free | Lead Free |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 6.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.192g |
| Width | 3.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDPC8013S to view detailed technical specifications.
No datasheet is available for this part.
