Dual N-Channel Power MOSFET featuring 25V drain-to-source voltage and 100A continuous drain current. Offers low 3.9mΩ drain-to-source resistance and 42W maximum power dissipation. Designed for surface mount applications with a compact 6.1mm x 5.1mm x 0.75mm package. Includes fast switching characteristics with a 13ns turn-on delay and 3ns fall time. Packaged on a 3000-piece tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDPC8016S technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 2.375nF |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.2077333g |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPC8016S Datasheet
Download the complete datasheet for Onsemi FDPC8016S to view detailed technical specifications.
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