N-channel Power MOSFET, UniFET™ series, featuring 600V drain-to-source breakdown voltage and 9A continuous drain current. This through-hole component offers 650mΩ drain-to-source resistance at a 10V gate-source voltage, with a maximum power dissipation of 42W. Designed for high efficiency, it boasts ultra-fast switching characteristics with turn-on delay of 25ns and fall time of 60ns. Packaged in TO-220F, this lead-free and RoHS compliant MOSFET operates from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power42W
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Technical Specifications
Onsemi FDPF10N60ZUT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.98nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 25ns |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF10N60ZUT Datasheet
Download the complete datasheet for Onsemi FDPF10N60ZUT to view detailed technical specifications.
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