N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 11.5A continuous drain current. This UniFET™ series component offers a low 650mΩ drain-source on-resistance and is packaged in a TO-220F for through-hole mounting. Key switching characteristics include a 24ns turn-on delay and 30ns fall time, with a maximum power dissipation of 165W. Operating temperature range is -55°C to 150°C, and it is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power165W
Quick Jump:
Technical Specifications
Onsemi FDPF12N50T technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.315nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 165W |
| Radiation Hardening | No |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 24ns |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF12N50T Datasheet
Download the complete datasheet for Onsemi FDPF12N50T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
