
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 12A continuous drain current. This UniFET II series component offers a low 650mΩ drain-source on-resistance and 39W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay and 130ns fall time.
Onsemi FDPF12N60NZ technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.676nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 39W |
| Radiation Hardening | No |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 25ns |
| Weight | 2.27g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDPF12N60NZ to view detailed technical specifications.
No datasheet is available for this part.
