N-channel enhancement mode power MOSFET featuring 400V drain-source voltage and 19A continuous drain current. This single-element DMOS transistor offers a low 240mOhm drain-source resistance at 10V Vgs and a typical gate charge of 32nC. Packaged in a 3-pin TO-220 through-hole configuration with a plastic body, it operates across a wide temperature range from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Onsemi FDPF19N40 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
9.2
Seated Plane Height (mm)
18.95(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
DMOS
Maximum Drain Source Voltage
400V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
19A
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
240@10VmOhm
Typical Gate Charge @ Vgs
32@10VnC
Typical Gate Charge @ 10V
32nC
Typical Input Capacitance @ Vds
1590@25VpF
Maximum Power Dissipation
215000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Onsemi FDPF19N40 Datasheet
Download the complete datasheet for Onsemi FDPF19N40 to view detailed technical specifications.
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