N-channel enhancement mode power MOSFET featuring 400V drain-source voltage and 19A continuous drain current. This single-element DMOS transistor offers a low 240mOhm drain-source resistance at 10V Vgs and a typical gate charge of 32nC. Packaged in a 3-pin TO-220 through-hole configuration with a plastic body, it operates across a wide temperature range from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Onsemi FDPF19N40 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 9.2 |
| Seated Plane Height (mm) | 18.95(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | DMOS |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 19A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 240@10VmOhm |
| Typical Gate Charge @ Vgs | 32@10VnC |
| Typical Gate Charge @ 10V | 32nC |
| Typical Input Capacitance @ Vds | 1590@25VpF |
| Maximum Power Dissipation | 215000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Onsemi FDPF19N40 Datasheet
Download the complete datasheet for Onsemi FDPF19N40 to view detailed technical specifications.
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