N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. This UniFET™ series component offers a maximum drain-source on-resistance of 230mΩ. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 38.5W. Key switching characteristics include a turn-on delay time of 95ns and a fall time of 105ns.
PackageTO-220-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDPF20N50T technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 230MR |
| Element Configuration | Single |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 3.12nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38.5W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38.5W |
| Radiation Hardening | No |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 95ns |
| DC Rated Voltage | 500V |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF20N50T Datasheet
Download the complete datasheet for Onsemi FDPF20N50T to view detailed technical specifications.
No datasheet is available for this part.
Product Images
