N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 3A continuous drain current. This UniFET II series component offers a low 2.5 Ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 27W. Key switching characteristics include a 10ns turn-on delay and 17ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power27W
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Technical Specifications
Onsemi FDPF3N50NZ technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.87mm |
| Input Capacitance | 280pF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 27W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 10ns |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF3N50NZ Datasheet
Download the complete datasheet for Onsemi FDPF3N50NZ to view detailed technical specifications.
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