N-Channel Power MOSFET, UniFET II series, featuring 600V drain-to-source breakdown voltage and 3.8A continuous drain current. This through-hole component offers a low 2.5 Ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 28W. Packaged in TO-220F, it operates from -55°C to 150°C and includes fast switching characteristics with turn-on delay of 12.7ns and fall time of 12.8ns. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power28W
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Technical Specifications
Onsemi FDPF4N60NZ technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 12.8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.07mm |
| Input Capacitance | 510pF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 30.2ns |
| Turn-On Delay Time | 12.7ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF4N60NZ Datasheet
Download the complete datasheet for Onsemi FDPF4N60NZ to view detailed technical specifications.
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