N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current of 55A. This single-element transistor offers a low on-resistance of 22mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 48W. Key switching characteristics include a 30ns turn-on delay and a 70ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power48W
Quick Jump:
Technical Specifications
Onsemi FDPF55N06 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.07mm |
| Input Capacitance | 1.51nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 30ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF55N06 Datasheet
Download the complete datasheet for Onsemi FDPF55N06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
