N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current of 55A. This single-element transistor offers a low on-resistance of 22mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 48W. Key switching characteristics include a 30ns turn-on delay and a 70ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power48W
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Technical Specifications
Onsemi FDPF55N06 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
55A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
95ns
Gate to Source Voltage (Vgs)
25V
Height
16.07mm
Input Capacitance
1.51nF
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
48W
Radiation Hardening
No
Rds On Max
22mR
RoHS Compliant
Yes
Series
UniFET™
Turn-Off Delay Time
70ns
Turn-On Delay Time
30ns
Weight
2.27g
Width
4.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDPF55N06 Datasheet
Download the complete datasheet for Onsemi FDPF55N06 to view detailed technical specifications.
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