N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 4.5A continuous drain current. This single-element MOSFET offers a low 1.55Ω drain-source resistance (Rds On Max) and is designed for through-hole mounting in a TO-220-3 package. Key switching characteristics include a 13ns turn-on delay and 20ns fall time, with a maximum power dissipation of 28W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied in a rail/tube package.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power28W
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Technical Specifications
Onsemi FDPF5N50FT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.55R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 700pF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Rds On Max | 1.55R |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 13ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF5N50FT Datasheet
Download the complete datasheet for Onsemi FDPF5N50FT to view detailed technical specifications.
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