
N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 3.9A continuous drain current. This UniFET II, Ultra FRFET II device offers a low 1.7Ω drain-to-source resistance and 30W power dissipation. Designed for through-hole mounting in a TO-220-3 package, it boasts fast switching characteristics with a 12ns turn-on delay and 22ns fall time. Operating temperature range spans from -55°C to 150°C, with RoHS compliance.
Onsemi FDPF5N50NZU technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.87mm |
| Input Capacitance | 485pF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 12ns |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDPF5N50NZU to view detailed technical specifications.
No datasheet is available for this part.
