
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. Offers 1.25 Ohm maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 33W. Operates across a temperature range of -55°C to 150°C.
Onsemi FDPF7N60NZ technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.25R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.25R |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 730pF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 1.25R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 17.5ns |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDPF7N60NZ to view detailed technical specifications.
No datasheet is available for this part.
