
N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 7A continuous drain current. This single-element transistor offers a low 1Ω maximum drain-to-source resistance and 40W power dissipation. Designed for through-hole mounting in a TO-220 package, it exhibits fast switching characteristics with turn-on delay of 17ns and fall time of 27ns. Operating temperature range is -55°C to 150°C.
Onsemi FDPF8N50NZF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.87mm |
| Input Capacitance | 735pF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 17ns |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDPF8N50NZF to view detailed technical specifications.
No datasheet is available for this part.
