Dual N-Channel MOSFET, 30V Drain-Source Voltage (Vdss), featuring 15A Continuous Drain Current (ID) and 12A Current Rating. Offers low Rds On of 7.5mR, with a maximum power dissipation of 1.8W. Designed for surface mount applications in a SOIC package, this RoHS compliant component boasts a 1.324nF input capacitance and fast switching times with a 14ns fall time.
PackageSOIC
Current Rating12A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDQ7698S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 15A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.324nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 90ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDQ7698S Datasheet
Download the complete datasheet for Onsemi FDQ7698S to view detailed technical specifications.
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