The FDR838P is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current rating of 8A and a maximum power dissipation of 1.8W. The device is packaged in a lead-free LSOP package and is RoHS compliant. The FDR838P has a drain to source breakdown voltage of -20V and a drain to source resistance of 14mR.
Onsemi FDR838P technical specifications.
| Package/Case | LSOP |
| Continuous Drain Current (ID) | 8A |
| Current Rating | -8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDR838P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.