ONSEMI

FDS2070N3

Datasheet

Onsemi

FDS2070N3

Name: FDS2070N3 Onsemi
Brand: Onsemi
SKU: FDS2070N3

N-CH MOSFET 150V 4.1A 78mR SOIC

N-Channel MOSFET, 150V Drain to Source Voltage (Vdss), 4.1A Continuous Drain Current (ID). Features 78mΩ Drain to Source Resistance (Rds On Max) and 3W Max Power Dissipation. Operates from -55°C to 150°C, with a Gate to Source Voltage (Vgs) of 20V and a Threshold Voltage of 2.6V. Packaged in an 8-SOIC for surface mounting, this RoHS compliant component offers 20ns fall time and 40ns turn-off delay time.

PackageSOIC

Current Rating4.1A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FDS2070N3 technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	4.1A
Current Rating	4.1A
Drain to Source Breakdown Voltage	150V
Drain to Source Resistance	78mR
Drain to Source Voltage (Vdss)	150V
Dual Supply Voltage	150V
Fall Time	20ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.884nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3W
Mount	Surface Mount
Nominal Vgs	2.6V
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	3W
Rds On Max	78mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerTrench®
Termination	SMD/SMT
Threshold Voltage	2.6V
Turn-Off Delay Time	40ns
DC Rated Voltage	150V