
N-channel MOSFET for surface mount applications, featuring a 150V drain-source breakdown voltage and 4.1A continuous drain current. This component offers a low 78mΩ drain-source on-resistance and a maximum power dissipation of 3W. With a 2.6V threshold voltage and fast switching characteristics including a 20ns fall time and 40ns turn-off delay, it is suitable for demanding electronic circuits. Packaged in an 8-SOIC case, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Onsemi FDS2070N7 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.1A |
| Current Rating | 4.1A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.884nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 78mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.6V |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 150V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS2070N7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
